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v23990-p840-a58/a59/c58/c59-pm preliminary datasheet flowpim0 3rd gen 1200v/15a 2 clips housing in 12 and 17mm height trench fieldstop technology igbt4 enhenced rectifier optional w/o brc industrial drives embedded generation v23990-p840-a58-pm 12mm height v23990-p840-a59-pm 17mm height v23990p840c58pm 12mm height; w/o brc v23990p840c59pm 17mm height; w/o brc tj=25c, unless otherwise specified parameter symbol value unit input rectifier doide repetitive peak reverse voltage v rrm 1600 v t =80c 36 condition flow0 housing t a rget applications types schematics features maximum ratings t h =80c 36 t c =80c t h =80c 4 3 t c =80c m aximum junction temperature t jmax 150 c transistor inverter v ce 1200 v t h =80c 1 9 t c =80c r epetitive peak collector current i cpuls tp limited by t j max 4 5 a t h =80c 5 2 t c =80c g ate-emitter peak voltage v ge 20 v t sc t j 1 50c 10 s v cc v ge =15v 8 00 v maximum junction temperature t jmax 175 c i c dc collector current p ower dissipation per igbt i 2 t 6 80 i fav a2s i fsm w a d c current t p =10ms w f orward current per diode surge forward current 370 p tot power dissipation per diode a i 2t-value t j =t j max a p tot collector-emitter voltage s hort circuit ratings t j =t j max t j =t j max copyright vincotech 1 revision: 2
v23990-p840-a58/a59/c58/c59-pm preliminary datasheet tj=25c, unless otherwise specified pa rameter symbol value unit condition maximum ratings diode inverter t h =80c 18 t c =80c r epetitive peak forward current i frm tp limited by t j max 3 0 a t h =80c 3 8 t c =80c maximum junction temperature t jmax 175 c transistor brc collector-emitter voltage v ce 1200 v t h =80c 1 2 t c =80c r epetitive peak collector current i cpuls tp limited by t j max t h =80c 2 4 a t h =80c 4 0 t c =80c g ate-emitter peak voltage v ge 20 v t sc t j 1 50c 10 s v cc v ge =15v 8 00 v maximum junction temperature t jmax 175 c w a power dissipation per igbt dc forward current i f t j =t j max i c p tot t j =t j max s hort circuit ratings dc collector current v power dissipation per diode p tot w t j =t j max v rrm peak repetitive reverse voltage a t j =t j max 1 200 diode brc v rrm 1200 v t h =80c 1 0 t c =80c r epetitive peak forward current i frm tp limited by t j max t h =80c 1 5 a t h =80c 2 2 t c =80c maximum junction temperature t jmax 150 c thermal properties storage temperature t stg -40+125 c operation temperature t jop -40+125 c insulation properties insulation voltage v is t=2s d c voltage 4000 v creepage distance min 12,7 mm min 12,7 mm w a t j =t j max p ower dissipation per diode p tot t j =t j max d c forward current i f peak repetitive reverse voltage c learance copyright vincotech 2 revision: 2
v23990-p840-a58/a59/c58/c59-pm preliminary datasheet p arameter symbol unit v ge (v) or v gs (v) v r (v) or v ce (v) or v ds (v) i c (a) or i f (a) o r i d (a) t (c) min typ max tj=25c 1 1,15 1,6 tj=125c 1,11 tj=25c 0,91 tj=125c 0,77 tj=25c 0,008 tj=125c 0,011 tj=25c 0,1 tj=150c thermal resistance chip to heatsink per chip r thjh thermal grease t hickness 50um = 1 w/mk 1, 66 k/w tj=25c 5 5,8 6,5 tj=125c tj=25c 1,6 1,94 2,1 tj=125c 2,26 tj=25c 0,01 tj=125c tj=25c 200 tj=125c tj=25c tj=125c 60 tj=25c tj=125c 19 tj=25c tj=125c 239 tj=25c tj=125c 106 tj=25c tj=125c 1,25 tj=25c tj=125c 1,24 15 20 vce=vge rgoff=16 ohm rgon=16 ohm mws na pf ns mws ma v 0 1200 v gate emitter threshold voltage transistor inverter v ce(sat) i ces turn-off delay time t urn-on delay time gate-emitter leakage current collector-emitter saturation voltage integrated gate resistor r gint collector-emitter cut-off current incl. diode n s ns ns c ies t r t d(on) t d(off) e off t f rise time 1 000 v to r t input rectifier diode v alue conditions characteristic values forward voltage t hreshold voltage (for power loss calc. only) slope resistance (for power loss calc. only) v f v v i r 30 r everse current ma 15 0,0005 30 e on turn-on energy loss per pulse t urn-off energy loss per pulse input capacitance 1600 fall time i ges 15 0 6 00 v ge(th) n one thermal resistance chip to heatsink per chip r thjh thermal grease t hickness 50um = 1 w/mk 1, 83 k/w tj=25c 1,35 1,90 2,35 tj=125c 1,91 tj=25c 2,7 tj=125c tj=25c tj=125c 16 tj=25c tj=125c 433 tj=25c tj=125c 2,75 di(rec)max tj=25c /dt tj=125c 109 tj=25c tj=125c 1,16 thermal resistance chip to heatsink per chip r thjh thermal grease t hickness 50um = 1 w/mk 2, 52 k/w 25 15 0 f=1mhz vcc=960v pf pf peak rate of fall of recovery current a/ms nc q rr erec t rr c oss v f i rrm mws u c 600 15 1200 ma 15 v a ns 15 10 diode inverter reverse leakage current di ode forward voltage i rm q gate c rss output capacitance r everse transfer capacitance gate charge reverse recovered energy reverse recovery time peak reverse recovery current reverse recovered charge 93 tj=25c tj=25c 100 rgon=16 ohm 56 copyright vincotech 3 revision: 2
v23990-p840-a58/a59/c58/c59-pm preliminary datasheet p arameter symbol unit v ge (v) or v gs (v) v r (v) or v ce (v) or v ds (v) i c (a) or i f (a) o r i d (a) t (c) min typ max value co nditions characteristic values tj=25c 5 5,8 6,5 tj=125c tj=25c 1,6 1,87 2,35 tj=125c 2,22 tj=25c 0,05 tj=125c tj=25c 200 tj=125c none tj=25c tj=125c 72 tj=25c tj=125c 24 tj=25c tj=125c 228 tj=25c tj=125c 104 tj=25c tj=125c 0,71 tj=25c tj=125c 0,62 thermal resistance chip to heatsink per chip r thjh thermal grease t hickness 50um = 1 w/mk 2, 36 k/w tj=25c 0,8 1,67 2,2 tj=125c 1,61 15 f=1mhz 0 rgoff=32ohm rgon=32ohm v f nc diode forward voltage 15 8 vcc=960v mws 7,5 pf pf pf v gate charge c oss c rss q gate v ma n a ns n s r gint t d(on) t r t d(off) t f reverse transfer capacitance o utput capacitance rise time turn-off delay time fall time turn-on energy loss per pulse i ces i ges c ies e on e off collector-emitter cut-off g ate-emitter leakage current turn-on delay time integrated gate resistor turn-off energy loss per pulse input capacitance gate emitter threshold voltage collector-emitter saturation voltage v ge(th) v ce(sat) ns n s v mws 600 8 25 diode brc tr ansistor brc 8 v c e=vge 0,0003 20 0 0 1200 50 490 50 30 tj=25c tj=25c tj=125c 1,61 tj=25c 250 tj=125c tj=25c tj=125c 10 tj=25c tj=125c 427 tj=25c tj=125c 1,638 di(rec)max tj=25c /dt tj=125c 73 tj=25c tj=125c 0,69 thermal resistance chip to heatsink per chip r thjh thermal grease t hickness 50um = 1 w/mk 3, 15 k/w r 25 tol. 13% t j=25c 19,1 22 24,9 r 100 tol. 5% t j=100c 1411 1486 1560 tj=25c 210 tj=25c 4000 reverse recovery time reverse recovered charge reverse recovery energy v f i r t rr q rr e rec peak reverse recovery current diode forward voltage reverse leakage current 7,5 1200 v ma a/ms a ns i rrm peak rate of fall of recovery current b -value b (25/100) k p ower dissipation given epcos-typ p mw rated resistance k thermistor 8 rg on=32ohm mws uc 15 600 tol. 3% copyright vincotech 4 revision: 2
v23990-p840-a58/a59/c58/c59-pm preliminary datasheet figure 1 output inverter igbt figure 2 output inverter igbt typical output characteristics i c = f(v ce ) i c = f(v ce ) a t at t p = 2 50 s t p = 2 50 s t j = 2 5 c t j = 1 25 c vge from 7 v to 17 v in steps of 1 v vge from 7 v to 17 v in steps of 1 v figure 3 ou tput inverter igbt figure 4 output inverter fred typical transfer characteristics ty pical diode forward current as ic = f(v ge ) a function of forward voltage i f = f(v f ) output inverter typical output characteristics 0 1 0 20 30 40 50 0 1 2 3 4 5 ic (a) v ce (v) 16 50 0 1 0 20 30 40 50 0 1 2 3 4 5 ic (a) v ce (v) at at t p = 2 50 s t p = 2 50 s v ce = 1 0 v 0 4 8 1 2 16 0 3 6 9 1 2 i c (a) v ge (v) 125 oc 25 oc 0 1 0 20 30 40 50 0 1 2 3 4 i f (a) v f (v) 25 oc 125 oc copyright vincotech 5 revision: 2
v23990-p840-a58/a59/c58/c59-pm preliminary datasheet figure 5 output inverter igbt figure 6 output inverter igbt typical switching energy losses ty pical switching energy losses as a function of collector current as a function of gate resistor e = f(i c ) e = f(r g ) w ith an inductive load at with an inductive load at t j = 1 25 c t j = 1 25 c v ce = 6 00 v v ce = 6 00 v v ge = 15 v v ge = 15 v r gon = 1 6 i c = 1 5 a r goff = 1 6 figure 7 ou tput inverter igbt figure 8 output inverter igbt typical switching times as a ty pical switching times as a function of collector current function of gate resistor output inverter e o ff e o n erec 0 0 ,5 1 1,5 2 2,5 3 0 5 10 15 20 25 30 e (mws) i c (a) e o ff e o n erec 0 0 ,5 1 1,5 2 2,5 3 0 15 30 45 60 75 e (mws) r g ( w ) t = f(i c ) t = f(r g ) w ith an inductive load at with an inductive load at t j = 1 25 c t j = 1 25 c v ce = 6 00 v v ce = 6 00 v v ge = 15 v v ge = 15 v r gon = 1 6 i c = 1 5 a r goff = 1 6 t d off t f t d on t r 0,001 0 ,01 0,1 1 0 5 10 15 20 25 30 t ( m s) ic (a) t d off t f t d on t r 0,001 0 ,01 0,1 1 0 15 30 45 60 75 t ( m s) r g ( w ww w ) copyright vincotech 6 revision: 2
v23990-p840-a58/a59/c58/c59-pm preliminary datasheet figure 9 output inverter fred diode figure 10 output inverter fred diode typical reverse recovery time as a ty pical reverse recovery current as a function of igbt turn on gate resistor function of igbt turn on gate resistor t rr = f(r gon ) i rrm = f(r gon ) a t at t j = 1 25 c t j = 1 25 c v r = 6 00 v v r = 6 00 v i f = 1 5 a i f = 1 5 a v ge = 15 v v ge = 15 v figure 11 ou tput inverter fred diode figure 12 output inverter fred diode typical reverse recovery charge as a ty pical rate of fall of forward function of igbt turn on gate resistor and reverse recovery current as a output inverter 0 0 ,1 0,2 0,3 0,4 0,5 0,6 0 15 30 45 60 75 t rr ( m s) r gon ( w ww w ) 0 1 0 20 30 40 50 0 15 30 45 60 75 irr m (a) r gon ( w ww w ) q rr = f(r gon ) f unction of igbt turn on gate resistor di0/dt,direc/dt = f(r gon ) a t at t j = 1 25 c t j = 1 25 c v r = 6 00 v v r = 6 00 v i f = 1 5 a i f = 1 5 a v ge = 15 v v ge = 15 v 0 0 ,5 1 1,5 2 2,5 3 3,5 0 15 30 45 60 75 q rr ( m c) r gon ( w ) di0/dt direc/dt 0 1 000 2000 3000 4000 5000 0 15 30 45 60 75 di rec / dt (a/ m s) r gon ( w ) copyright vincotech 7 revision: 2
v23990-p840-a58/a59/c58/c59-pm preliminary datasheet figure 13 figure 14 igbt transient thermal impedance fr ed transient thermal impedance as a function of pulse width as a function of pulse width z thjh = f(tp) z thjh = f(tp) w ith with d = tp / t d = tp / t r thjh = 1 ,83 k/w r thjh = 2 ,52 k/w igbt thermal model values fred thermal model values r (c/w) tau (s) r (c/w) tau (s) 0,06 5,6e+00 0,05 9,6e+00 0,28 8,7e-01 0,26 8,2e-01 0,77 1,7e-01 1,04 1,2e-01 output inverter z thjh (k/w) t p (s) 10 1 10 0 10 -1 10 -2 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -5 d = 0,5 0 ,2 0,1 0,05 0,02 0,01 0,005 0.000 z thjh (k/w) t p (s) 10 1 10 0 10 -1 10 -2 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -5 d = 0,5 0 ,2 0,1 0,05 0,02 0,01 0,005 0.000 0,42 3,4e-02 0,69 2,6e-02 0,19 6,2e-03 0,27 3,4e-03 0,10 5,5e-04 0,21 3,8e-04 copyright vincotech 8 revision: 2
v23990-p840-a58/a59/c58/c59-pm preliminary datasheet figure 15 output inverter igbt figure 16 output inverter igbt power dissipation as a col lector current as a function of heatsink temperature function of heatsink temperature p tot = f(t h ) i c = f(t h ) a t at t j = 1 75 c t j = 1 75 c v ge = 15 v fi gure 17 ou tput inverter fred figure 18 output inverter fred power dissipation as a for ward current as a function of heatsink temperature function of heatsink temperature p tot = f(t h ) i f = f(t h ) output inverter 0 2 0 40 60 80 100 0 50 100 150 200 p tot (w) th ( o c) 0 5 1 0 15 20 25 30 0 50 100 150 200 i c (a) th ( o c) 75 30 at at t j = 1 75 c t j = 1 75 c 0 1 5 30 45 60 0 50 100 150 200 p tot (w) th ( o c) 0 5 1 0 15 20 25 0 50 100 150 200 i f (a) th ( o c) copyright vincotech 9 revision: 2
v23990-p840-a58/a59/c58/c59-pm preliminary datasheet figure 1 brake igbt figure 2 brake igbt typical output characteristics ty pical output characteristics i c = f(v ce ) i c = f(v ce ) a t at t p = 2 50 s t p = 2 50 s t j = 2 5 c t j = 1 25 c vge from 7 v to 17 v in steps of 1 v vge from 7 v to 17 v in steps of 1 v figure 3 br ake igbt figure 4 brake fred typical transfer characteristics ty pical diode forward current as i c = f(v ge ) a function of forward voltage i f = f(v f ) brake 0 8 1 6 24 32 0 1 2 3 4 5 i c (a) v ce (v) 9 30 (a) 0 8 1 6 24 32 0 1 2 3 4 5 i c (a) v ce (v) at at t p = 2 50 s t p = 2 50 s v ce = 1 0 v 0 1 ,5 3 4,5 6 7,5 9 0 2 4 6 8 1 0 12 i c (a) v ge (v) 125 o c 25 o c 0 5 1 0 15 20 25 0 0,5 1 1,5 2 2,5 3 i f (a) v f (v) 125 o c 25 o c copyright vincotech 10 revision: 2
v23990-p840-a58/a59/c58/c59-pm preliminary datasheet figure 5 brake igbt figure 6 brake igbt typical switching energy losses ty pical switching energy losses as a function of collector current as a function of gate resistor e = f(i c ) e = f(r g ) w ith an inductive load at with an inductive load at t j = 1 25 c t j = 1 25 c v ce = 6 00 v v ce = 6 00 v v ge = 15 v v ge = 15 v r gon = 3 2 i c = 8 a r goff = 3 2 figure 7 br ake igbt figure 8 brake igbt typical switching times as a ty pical switching times as a function of collector current function of gate resistor brake e o ff e o n e r ec 0 0 ,25 0,5 0,75 1 1,25 1,5 0 4 8 12 16 e (mws) i c (a) e o ff e o n e r ec 0 0 ,25 0,5 0,75 1 1,25 1,5 0 30 60 90 120 150 e (mws) r g ( w ww w ) t = f(i c ) t = f(r g ) w ith an inductive load at with an inductive load at t j = 1 25 c t j = 1 25 c v ce = 6 00 v v ce = 6 00 v v ge = 15 v v ge = 15 v r gon = 3 2 i c = 8 a r goff = 3 2 t d off t f t d on t r 0,001 0 ,01 0,1 1 0 4 8 12 16 t ( m s) ic (a) t d off t f t d on t r 0,001 0 ,01 0,1 1 0 30 60 90 120 150 t ( m s) r g ( w ww w ) copyright vincotech 11 revision: 2
v23990-p840-a58/a59/c58/c59-pm preliminary datasheet figure 9 figure 10 igbt transient thermal impedance fr ed transient thermal impedance as a function of pulse width as a function of pulse width z thjh = f(t p ) z thjh = f(t p ) w ith with d = tp / t d = tp / t r thjh = 2 ,36 k/w r thjh = 3 ,15 k/w brake z thjh (k/w) t p (s) 10 1 10 0 10 -1 10 -2 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -5 d = 0,5 0 ,2 0,1 0,05 0,02 0,01 0,005 0.000 z thjh (k/w) t p (s) 10 1 10 0 10 -1 10 -2 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -5 d = 0,5 0 ,2 0,1 0,05 0,02 0,01 0,005 0.000 copyright vincotech 12 revision: 2
v23990-p840-a58/a59/c58/c59-pm preliminary datasheet figure 11 brake igbt figure 12 brake igbt power dissipation as a col lector current as a function of heatsink temperature function of heatsink temperature p tot = f(t h ) i c = f(t h ) a t at t j = 1 75 oc t j = 1 75 oc v ge = 1 5 v figure 13 br ake fred figure 14 brake fred power dissipation as a for ward current as a function of heatsink temperature function of heatsink temperature p tot = f(t h ) i f = f(t h ) brake 0 1 5 30 45 60 75 0 50 100 150 200 p tot (w) th ( o c) 0 2 4 6 8 1 0 12 0 50 100 150 200 i c (a) th ( o c) at at t j = 1 50 oc t j = 1 50 oc 0 1 0 20 30 40 50 0 50 100 150 200 p tot (w) th ( o c) 0 2 4 6 8 1 0 12 0 50 100 150 200 i f (a) th ( o c) copyright vincotech 13 revision: 2
v23990-p840-a58/a59/c58/c59-pm preliminary datasheet figure 1 rectifier diode figure 2 rectifier diode typical diode forward current as di ode transient thermal impedance a function of forward voltage as a function of pulse width i f = f(v f ) z thjh = f(t p ) a t with t p = 2 50 s d = tp / t r thjh = 1 ,66 k/w figure 3 re ctifier diode figure 4 rectifier diode power dissipation as a for ward current as a function of heatsink temperature function of heatsink temperature p tot = f(t h ) i f = f(t h ) input rectifier bridge 0 2 0 40 60 80 100 0 0,5 1 1,5 2 i f (a) v f (v) 25 c 125 c z thjc (k/w) t p (s) 10 1 10 0 10 -1 10 -2 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 -5 d = 0,5 0 ,2 0,1 0,05 0,02 0,01 0,005 0.000 at at t j = 1 50 oc t j = 1 50 oc 0 2 0 40 60 80 100 0 50 100 150 200 p tot (w) th ( o c) 0 1 0 20 30 40 50 60 70 0 50 100 150 200 i f (a) th ( o c) copyright vincotech 14 revision: 2
v23990-p840-a58/a59/c58/c59-pm preliminary datasheet figure 1 thermistor typical ntc characteristic as a function of temperature r t = f (t) thermistor 0 5 000 10000 15000 20000 25000 25 50 75 100 125 r/ t (c) ntc-typical temperature characteristic copyright vincotech 15 revision: 2
v23990-p840-a58/a59/c58/c59-pm preliminary datasheet t j 125 c r gon 16 r goff 19 fi gure 1 ou tput inverter igbt figure 2 output inverter igbt turn-off switching waveforms & definition of tdoff, t eoff turn-on switching waveforms & definition of tdon, teon (t eoff = integrating time for e off ) (t eon = integrating time for e on ) v ge (0%) = - 15 v v ge (0%) = - 15 v v ge (100%) = 1 5 v v ge (100%) = 1 5 v v c (100%) = 6 00 v v c (100%) = 6 00 v i c (100%) = 1 5 a i c (100%) = 1 5 a t doff = 0 ,24 s t don = 0 ,06 s t eoff = 0 ,57 s t eon = 0 ,25 s figure 3 ou tput inverter igbt figure 4 output inverter igbt switching definitions output inverter general conditions = = = i c 1% u ce 90% u g e 90% -40 -20 0 20 40 60 80 100 120 140 -0,2 0 0,2 0,4 0,6 0,8 % time (us) t doff t eo ff uce ic u g e ic 1 0% uge 1 0% t d on u ce 3% -4 0 0 40 80 120 160 200 240 2,8 2,9 3 3,1 3,2 3,3 3,4 % time(us) ic uce t e on uge turn-off switching waveforms & definition of t f turn-on switching waveforms & definition of t r v c (100%) = 6 00 v v c (100%) = 6 00 v i c (100%) = 1 5 a i c (100%) = 1 5 a t f = 0 ,106 s t r = 0 ,019 s fitted i c1 0% i c 90% i c 60% i c 40% -20 0 20 40 60 80 100 120 140 0,15 0,2 0,25 0,3 0,35 0,4 0,45 0,5 % time (us) uce ic t f i c1 0% ic90% - 20 20 60 100 140 180 220 2,8 2,9 3 3,1 3,2 3,3 % time(us) tr uce ic copyright vincotech 16 revision: 2
v23990-p840-a58/a59/c58/c59-pm preliminary datasheet figure 5 output inverter igbt figure 6 output inverter igbt turn-off switching waveforms & definition of t eoff turn-on switching waveforms & definition of t eon p off (100%) = 9 ,00 kw p on (100%) = 9 ,00 kw e off (100%) = 1 ,24 mj e on (100%) = 1 ,25 mj t eoff = 0 ,57 s t eon = 0 ,25 s figure 7 ou tput inverter igbt figure 8 output inverter fred gate voltage vs gate charge tur n-off switching waveforms & definition of t rr switching definitions output inverter ic 1% uge90% - 20 0 20 40 60 80 100 120 -0,2 0 0,2 0,4 0,6 0,8 % time (us) poff eoff teoff u c e3% u g e10% -20 20 6 0 100 140 180 220 2,8 2,9 3 3,1 3,2 3,3 3,4 % ti me(us) p on e on t eon 20 120 v geoff = - 15 v v d (100%) = 6 00 v v geon = 1 5 v i d (100%) = 1 5 a v c (100%) = 6 00 v i rrm (100%) = - 16 a i c (100%) = 1 5 a t rr = 0 ,43 s q g = 1 04,04 nc -15 - 10 -5 0 5 10 15 -20 0 20 40 60 80 100 120 uge (v) qg (nc) i r rm 10% i r rm 90% i r rm 100% trr - 120 -80 -40 0 40 80 2,8 3 3,2 3,4 3,6 3,8 % time(us) id ud f itted copyright vincotech 17 revision: 2
v23990-p840-a58/a59/c58/c59-pm preliminary datasheet figure 9 output inverter fred figure 10 output inverter fred turn-on switching waveforms & definition of t qrr turn-on switching waveforms & definition of t erec (t qrr = integrating time for q rr ) (t erec = integrating time for e rec ) i d (100%) = 1 5 a p rec (100%) = 9 ,00 kw q rr (100%) = 2 ,75 c e rec (100%) = 1 ,157 mj t qint = 0 ,90 s t erec = 0 ,90 s switching definitions output inverter 125 o c 25 o c 10 1 10 0 10 - 1 10 - 2 10 - 4 10 - 3 10 - 2 10 - 1 10 0 10 1 10 - 5 10 1 10 0 10 - 1 10 - 2 10 - 4 10 - 3 10 - 2 10 - 1 10 0 10 1 10 - 5 25 c 125 c 125 o c 25 o c 125 o c 25 o c 10 1 10 0 10 - 1 10 - 2 10 - 4 10 - 3 10 - 2 10 - 1 10 0 10 1 10 - 5 10 1 10 0 10 - 1 10 - 2 10 - 4 10 - 3 10 - 2 10 - 1 10 0 10 1 10 - 5 25 c 125 c 10 1 10 0 10 - 1 10 - 2 10 - 4 10 - 3 10 - 2 10 - 1 10 0 10 1 10 - 5 125 o c 25 o c 10 0 10 - 1 10 - 2 10 - 4 10 - 3 10 - 2 10 - 1 10 0 10 1 10 - 5 10 1 10 0 10 - 1 10 - 2 10 - 4 10 - 3 10 - 2 10 - 1 10 0 10 1 10 - 5 10 1 10 0 10 - 1 10 - 2 10 - 4 10 - 3 10 - 2 10 - 1 10 0 10 1 10 - 5 25 c 125 c 10 1 10 0 10 - 1 10 - 2 10 - 4 10 - 3 10 - 2 10 - 1 10 0 10 1 10 - 5 10 1 10 2 10 0 10 - 1 10 - 2 10 2 10 - 1 t vj =130 o c 10 0 10 1 10 - 3 t =25 o c v i i 100w 150w 50w p (t ) 10 0 tqint - 150 -100 -50 0 50 100 150 2,8 3 3,2 3,4 3,6 3,8 4 4,2 % t ime(us) id q r r -20 0 2 0 40 60 80 100 120 2,8 3 3,2 3,4 3,6 3,8 4 4,2 % time(us) p r ec erec te r ec copyright vincotech 18 revision: 2
v23990-p840-a58/a59/c58/c59-pm preliminary datasheet pinout outline package outline and pinout pinout copyright vincotech 19 revision: 2
v23990-p840-a58/a59/c58/c59-pm preliminary datasheet product status definitions formative or in design first production full production disclaimer life support policy as used herein: vincotech reserves the right to make changes without further notice to any products herein to improve reliability, function or design. vincotech does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval of vincotech. 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. preliminary this datasheet contains preliminary data, and supplementary data may be published at a later date. vincotech reserves the right to make changes at any time without notice in order to improve design. the data contained is exclusively intended for technically trained staff. final this datasheet contains final specifications. vincotech reserves the right to make changes at any time without notice in order to improve design. the data contained is exclusively intended for technically trained staff. target product status datasheet status definition this datasheet contains the design specifications for product development. specifications may change in any manner without notice. the data contained is exclusively intended for technically trained staff. copyright vincotech 20 revision: 2

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